• DocumentCode
    542422
  • Title

    Circuit models for PN integrated varactors

  • Author

    Marrero-Martín, M. ; García, J. ; González, B. ; Hernández, A.

  • Author_Institution
    Dept. of Electron. Eng. & Control, Univ. de Las Palmas de Gran Canaria, Las Palmas de Gran Canaria, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper compares different circuit models describing the performance of integrated varactors, which are designed, manufactured, measured and simulated with a 0.35 μm silicon standard technology. Three models are presented, named: simple, capacitive-inductive and physical. Their differences consist on the circuit elements used, capacitances, inductances and resistances, and the way they are connected. The more elaborated one, the physical model, contains a large number of components and, therefore, produces a better approximation of the varactor response. All models are accurate and scalable over a wide range of layout dimensions and can be used to design radio-frequency integrated circuits, RFICs.
  • Keywords
    BiCMOS integrated circuits; p-n junctions; varactors; BiCMOS design; PN integrated varactors; PN junction; RFIC; capacitive-inductive model; circuit models; physical model; radio-frequency integrated circuit design; silicon standard technology; size 0.35 mum; Capacitance; Frequency measurement; Integrated circuit modeling; Junctions; Resonant frequency; Substrates; Varactors; PN junction; circuit model; integrated varactor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744242
  • Filename
    5744242