DocumentCode
542427
Title
Optical measurements on GaAs(Ti) thin films sputtered on GaAs
Author
Boronat, A. ; Silvestre, S. ; Castaner, L.
Author_Institution
Electron. Eng. Dept., UPC, Barcelona, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
3
Abstract
Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
Keywords
III-V semiconductors; absorption coefficients; gallium arsenide; infrared spectra; reflectivity; semiconductor thin films; sputter deposition; titanium; ultraviolet spectra; visible spectra; GaAs; GaAs(Ti); absorptance; optical measurement; reflectance; sputtering deposition; thin films; transmittance; Gallium arsenide; Photonics; Reflectivity; Sputtering; Substrates; Temperature measurement; GaAs(Ti); absorptance; sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744250
Filename
5744250
Link To Document