A SiGe HBT low noise variable gain amplifier with controllable feedback of a p-i-n diode

Author

Xie, H.Y. ; Lu, Z.Y. ; Gan, J.N. ; Jin, D.Y. ; Zhang, W.R. ; Ding, C.B. ; Liu, B.Y. ; Zhang, D.H.

Author_Institution

Colledge of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

20-22 April 2011

Firstpage

1

Lastpage

4

Abstract

A low noise amplifier with dB-linear variable gain has been designed and fabricated based on high performance SiGe HBT in this paper. Negative feedback technology has been adopted to change the transmission gain of HBT through variable resistance of a forward biased p-i-n diode in the feedback path. The simulation results and measurement results agree well in frequency of 1.8GHz for CDMA application. A dynamic gain control of 14 dB in a control voltage range of 0.6-3.0 V has been achieved through the controllable feedback of the p-i-n diode. The noise figure was always lower than 5.5dB when the controlled voltage changed and the minimum noise figure is about 2.6dB. Both input matching and output matching maintained constants under all controlled voltage points.

Keywords

Ge-Si alloys; code division multiple access; feedback amplifiers; heterojunction bipolar transistors; low noise amplifiers; p-i-n diodes; CDMA application; SiGe; SiGe HBT; controllable feedback; dB-linear variable gain; dynamic gain control; forward biased p-i-n diode; frequency 1.8 GHz; low noise variable gain amplifier; negative feedback technology; voltage 0.6 V to 3.0 V; Gain; Heterojunction bipolar transistors; Impedance matching; Noise; Noise figure; P-i-n diodes; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint

Conference_Location

Hangzhou

Print_ISBN

978-1-4577-0625-7

Electronic_ISBN

978-7-308-08555-7

Type

conf

Filename

5773992