DocumentCode
549313
Title
High current gain of doping-graded GaAsSb/InP DHBTs
Author
Wu, Bing-Ruey ; Dvorak, Martin W. ; Colbus, Patrick ; Low, Tom S. ; D´Avanzo, Don
Author_Institution
Technol. Leadership Organ. - High Freq. Technol. Center (HFTC), Agilent Technol., Inc., Santa Rosa, CA, USA
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
3
Abstract
It is demonstrated that GaAsSb:C doping grade improves device DC current gain in GaAsSb/InP DHBTs. A beta versus base sheet resistance curve is established to examine the effectiveness of various base grading schemes compared to a uniformly doped baseline. The results indicate a 20 % increase in beta with the doping grade compared to the baseline.
Keywords
III-V semiconductors; carbon; electric resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor heterojunctions; GaAsSb:C-InP; device DC current gain; doping-graded DHBT; sheet resistance curve; uniformly doped baseline; Calibration;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978312
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