Measurement of the interface specific resistivity of a heavily doped n-type InP/GaInAs heterostructure

Author

Halevy, Ran ; Cohen, Shimon ; Gavrilov, Arkadi ; Ritter, Dan

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

3

Abstract

We present measurements of the specific resistivity of a heavily doped n-type InP/InGaAs interface. Transmission line measurements of an InP/GaInAs heterostructure were carried out before and after etching of the GaInAs layer between the pads. The specific interface resistivity was extracted numerically, and error bars were calculated. The obtained specific interface resistivity, averaged on several TLM structures across the wafer, was 1.7 ± 0.36 [Ω-μm²].

Keywords

III-V semiconductors; electrical resistivity; etching; gallium arsenide; heavily doped semiconductors; indium compounds; semiconductor heterojunctions; InP-GaInAs; etching; heavily doped n-type heterostructure; interface specific resistivity; transmission line method; Analytical models; Conductivity; Electrical resistance measurement; Indium phosphide; Monte Carlo methods; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978359