• DocumentCode
    549521
  • Title

    A method to leverage pre-silicon collateral and analysis for post-silicon testing and validation

  • Author

    Miller, Gary ; Bhattarai, Bandana ; Hsu, Yu-Chin ; Dutt, Jay ; Chen, Xi ; Bakewell, George

  • Author_Institution
    Freescale Semicond., Inc., Austin, TX, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    575
  • Lastpage
    578
  • Abstract
    Post-silicon testing and validation - whether to screen out defective parts, confirm proper operation in the target application, or test robustness in the presence of transient issues induced by environmental factors - is especially crucial for safety-critical devices. These activities sometimes leverage information gathered prior to fabrication through the injection and testing of stuck-at and transient faults. Traditionally, this process requires a gate-level model in which faulty logic nodes are modeled as 0 and 1 either statically or dynamically. Operating on this unfamiliar gate-level model is a laborious task for engineering teams, requiring a significant investment in time and compute power. This complicates the tasks of better equipping designs for safety-critical needs and augmenting production test quality metrics using well-chosen functional tests. This paper presents research into new techniques for speeding up this process using RTL models and RTL simulation.
  • Keywords
    elemental semiconductors; semiconductor device reliability; semiconductor device testing; silicon; RTL models; Si; augmenting production test quality metrics; engineering teams; environmental factors; faulty logic nodes; leverage presilicon collateral; post-silicon testing; safety-critical devices; stuck-at testing; transient faults; Analytical models; Collaboration; Correlation; Discrete Fourier transforms; Logic gates; Silicon; Testing; Safety-critical; fault detection; mutation; test planning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
  • Conference_Location
    New York, NY
  • ISSN
    0738-100x
  • Print_ISBN
    978-1-4503-0636-2
  • Type

    conf

  • Filename
    5981856