• DocumentCode
    549700
  • Title

    Strain-engineering for high-performance STT-MRAM

  • Author

    Iba, Y. ; Tsunoda, K. ; Lee, Y.M. ; Yoshida, C. ; Noshiro, H. ; Takahashi, A. ; Yamazaki, Y. ; Nakabayashi, M. ; Hatada, A. ; Aoki, M. ; Sugii, T.

  • Author_Institution
    Low-power Electron. Assoc. & Project ( LEAP ), Tsukuba, Japan
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    212
  • Lastpage
    213
  • Abstract
    Strain-engineering using the inverse magnetostrictive effect has been performed to improve the performance of spin transfer torque magnetoresistance random access memory (STT-MRAM). The thermal stability factor E/kBT has been enhanced by 40% without increasing a switching current by controlling the process-induced stress in a free layer in MTJ (magnetic tunnel junctions) with mechanically engineered manufacturing steps.
  • Keywords
    MRAM devices; magnetic tunnelling; thermal stability; MTJ; high-performance STT-MRAM; inverse magnetostrictive effect; magnetic tunnel junctions; process-induced stress; spin transfer torque magnetoresistance random access memory; strain engineering; thermal stability factor; Films; Magnetic tunneling; Magnetostriction; Saturation magnetization; Stress; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549700