Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

Author

Kim, Sung Min ; Seo, Sunae ; Song, Emil B. ; Seo, David H. ; Seok, Hankyu ; Wang, Kang L.

Author_Institution

Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA

fYear

2011

fDate

14-16 June 2011

Firstpage

118

Lastpage

119

Abstract

A non-volatile memory (NVM) exploiting single-layer graphene (SLG) as a channel material has been fabricated through low temperature processes below 250°C and characterized for the first time. The injection of electrons into the trap sites of a triple high-k dielectrics stack results in a memory window of more than 9.0V. The NVGMs fabricated by processes compatible with flat panel display (FPD) can be utilized for flexible electronics and high-density 3D multi-stack memory cells.

Keywords

flat panel displays; flexible displays; graphene; high-k dielectric thin films; random-access storage; 3D multistack ultrahigh-density data storages; FPD; NVGM; SLG; channel material; electron injection; flat panel display; flexible electronics; high-density 3D multistack memory cells; high-k dielectrics stack; low-temperature process fabrication; nonvolatile graphene channel memory; single-layer graphene; Electrodes; Flexible electronics; Logic gates; Nonvolatile memory; Silicon; Stress; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984668