DocumentCode
549881
Title
20-µW operation of an a-IGZO TFT-based RFID chip using purely NMOS “active” load logic gates with ultra-low-consumption power
Author
Ozaki, H. ; Kawamura, T. ; Wakana, H. ; Yamazoe, T. ; Uchiyama, H.
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
fYear
2011
fDate
15-17 June 2011
Firstpage
54
Lastpage
55
Abstract
We fabricated the first RFID chip using amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a glass substrate. Logic gates with low-consumption current (~1 nA) and steep on/off switching was also proposed. The logic circuit achieved small enough power consumption (20 μW) for wireless operation and a wireless operation of the RFID tag was demonstrated.
Keywords
MOS integrated circuits; gallium compounds; indium compounds; logic circuits; logic gates; low-power electronics; microprocessor chips; radiofrequency identification; thin film transistors; zinc compounds; InGaZnO; NMOS active load logic gates; RFID tag; a-IGZO TFT-based RFID chip; a-IGZO thin film transistors; logic circuit; power 20 muW; ultra-low-consumption power; wireless operation; Coils; Inverters; Logic circuits; Logic gates; Power demand; Radiofrequency identification; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location
Honolulu, HI
ISSN
2158-5601
Print_ISBN
978-1-61284-175-5
Type
conf
Filename
5986421
Link To Document