A voltage-reference-free pulse density modulation (VRF-PDM) 1-V input switched-capacitor 1/2 voltage converter with output voltage trimming by hot carrier injection and periodic activation scheme

Author

Zhang, Xin ; Pu, Yu ; Ishida, Koichi ; Ryu, Yoshikatsu ; Okuma, Yasuyuki ; Chen, Po-Hung ; Watanabe, Kazunori ; Sakurai, Takayasu ; Takamiya, Makoto

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

15-17 June 2011

Firstpage

280

Lastpage

281

Abstract

A 1-V input, 0.45-V output switched-capacitor (SC) 2:1 voltage converter is developed in 65-nm CMOS. A proposed voltage-reference-free pulse density modulation (VRF-PDM) increased the efficiency from 17% to 73% at 50-μA output current by reducing the pulse density and eliminating the voltage reference circuit. An output voltage trimming by the hot carrier injection to a comparator and a periodic activation scheme of the SC converter are also proposed to solve the problems attributed to VRF-PDM.

Keywords

CMOS integrated circuits; comparators (circuits); hot carriers; power convertors; pulse modulation; switched capacitor networks; CMOS; SC converter; comparator; current 50 muA; efficiency 17 percent to 73 percent; hot carrier injection; output voltage trimming; periodic activation scheme; size 65 nm; switched-capacitor; voltage 0.45 V; voltage 1 V; voltage converter; voltage reference circuit; voltage-reference-free pulse density modulation; Density measurement; Hot carrier injection; Human computer interaction; Modulation; Pulse measurements; Switches; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSIC), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

2158-5601

Print_ISBN

978-1-61284-175-5

Type

conf

Filename

5986453