DocumentCode
551308
Title
Patterned growth of AlN nanowires and investigation on their field emission properties
Author
Su, Zanjia ; Liu, Fei ; Li, Lifang ; Guo, Tongyi ; Gan, Haibo ; Chen, Jun ; Deng, Shaozhi ; Xu, Ningsheng
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2011
fDate
18-22 July 2011
Firstpage
41
Lastpage
42
Abstract
AlN nanowires have low electron affinity, which has been considered as one of the ideal cathode materials in future. Although many methods have been developed to prepare AlN nanowires with different morphologies, little effort is found to focus on the patterned growth technique, which has limited their applicaitions. Here we provide a ceramic template method to fabricate patterned AlN nanowire arrays, which have better field emission performance than the continuous nanowire film.
Keywords
III-V semiconductors; aluminium compounds; electron affinity; field emission; nanofabrication; nanopatterning; nanowires; semiconductor growth; wide band gap semiconductors; AlN; cathode materials; ceramic template method; electron affinity; field emission properties; morphology; nanowire film; nanowire patterned growth; Ceramics; Films; Iron; Morphology; Nanowires; Substrates; AlN nanowires; field emission; patterned growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location
Wuppertal
ISSN
pending
Print_ISBN
978-1-4577-1243-2
Electronic_ISBN
pending
Type
conf
Filename
6004552
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