• DocumentCode
    551308
  • Title

    Patterned growth of AlN nanowires and investigation on their field emission properties

  • Author

    Su, Zanjia ; Liu, Fei ; Li, Lifang ; Guo, Tongyi ; Gan, Haibo ; Chen, Jun ; Deng, Shaozhi ; Xu, Ningsheng

  • Author_Institution
    State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2011
  • fDate
    18-22 July 2011
  • Firstpage
    41
  • Lastpage
    42
  • Abstract
    AlN nanowires have low electron affinity, which has been considered as one of the ideal cathode materials in future. Although many methods have been developed to prepare AlN nanowires with different morphologies, little effort is found to focus on the patterned growth technique, which has limited their applicaitions. Here we provide a ceramic template method to fabricate patterned AlN nanowire arrays, which have better field emission performance than the continuous nanowire film.
  • Keywords
    III-V semiconductors; aluminium compounds; electron affinity; field emission; nanofabrication; nanopatterning; nanowires; semiconductor growth; wide band gap semiconductors; AlN; cathode materials; ceramic template method; electron affinity; field emission properties; morphology; nanowire film; nanowire patterned growth; Ceramics; Films; Iron; Morphology; Nanowires; Substrates; AlN nanowires; field emission; patterned growth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
  • Conference_Location
    Wuppertal
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-1243-2
  • Electronic_ISBN
    pending
  • Type

    conf

  • Filename
    6004552