• DocumentCode
    551336
  • Title

    Field emission spectroscopy studies on photo-sensitive p-doped Si-tip arrays

  • Author

    Bornmann, B. ; Mingels, S. ; Lützenkirchen-Hecht, D. ; Müller, G. ; Dams, F. ; Schreiner, R.

  • Author_Institution
    FB C Phys. Dept., Univ. of Wuppertal, Wuppertal, Germany
  • fYear
    2011
  • fDate
    18-22 July 2011
  • Firstpage
    101
  • Lastpage
    102
  • Abstract
    The influence of laser illumination on the integral as well as on the energy-resolved electron currents from well-defined p-doped Si-tip arrays was investigated. First results have provided stable cathode currents between 100 nA and 500 μA in a field range of 2-20 V/μm. Green laser illumination resulted in an enhanced cathode current and an increased population of the conduction band which can be seen in the spectra. Charging of the cathode surface, however, leads to a shift and broadening of the spectra which complicate their analysis. Therefore, further experiments with a rotatable cathode and a varying number of tips as well as with a tunable laser are planned.
  • Keywords
    cathodes; conduction bands; electron field emission; elemental semiconductors; lighting; silicon; Si; cathode current; cathode surface; conduction band; current 100 nA to 500 muA; energy-resolved electron currents; field emission spectroscopy; geen laser illumination; photo-sensitive p-doped Si-tip arrays; Cathodes; Current measurement; Lighting; Logic gates; Photonic band gap; Silicon; Surface emitting lasers; field emission spectroscopy; field emitter arrays; laser illumination; p-doped silicon tips; photo sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
  • Conference_Location
    Wuppertal
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-1243-2
  • Electronic_ISBN
    pending
  • Type

    conf

  • Filename
    6004582