Field emission mechanism of n-type semiconducting diamond with negative electron affinity

Author

Yamada, Takatoshi ; Hasegawa, Masataka ; Kudo, Yuki ; Masuzawa, Tomoaki ; Okano, Ken ; Nebel, Christoph E.

Author_Institution

Nanotube Rsearch Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2011

fDate

18-22 July 2011

Firstpage

125

Lastpage

126

Abstract

In order to utilize negative electron affinities (NEA) on diamond surfaces, field emission from n-type diamond with NEA was investigated. It was confirmed, by ultraviolet photoelectron spectroscopy (UPS), that hydrogen-plasma treated n-type diamond surface has NEA. Field electron emission properties as a function of anode-diamond distances were measured and a potential drop in vacuum was evaluated. It was found that electric fields of over few 10V/μm were required to emit electrons from n-type diamond NEA surface. It was considered that such higher electric fields were necessary to reduce an internal barrier at NEA surface. From the field emission results, the internal barrier height was estimated to be about 3.3 eV.

Keywords

diamond; electrodes; electron affinity; electron field emission; elemental semiconductors; plasma materials processing; ultraviolet photoelectron spectra; C; anode-diamond distances; diamond surfaces; electric fields; field electron emission properties; hydrogen-plasma treatment; internal barrier; internal barrier height; n-type semiconducting diamond; negative electron affinity; ultraviolet photoelectron spectroscopy; Anodes; Current measurement; Diamond-like carbon; Electric fields; Surface treatment; Temperature measurement; Uninterruptible power systems; band bending; field emission; n-type diamond; negative electron affinity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Conference_Location

Wuppertal

ISSN

pending

Print_ISBN

978-1-4577-1243-2

Electronic_ISBN

pending

Type

conf

Filename

6004594