Effect of high-temperature solder void on heat dissipation performance of Smart Power Module

Author

Zhai, Mingjing ; Guo, Mengjie

Author_Institution

Dept. EE, Changzhou Inst. of Technol., Changzhou, China

Volume

1

fYear

2011

fDate

29-31 July 2011

Abstract

In this paper, the relationship between high-temperature solder void of the IGBT (Insulated Gate Bipolar Transistor) & FWD (Freewheeling Diode) and heat dissipation of the SPM (Smart Power Module) is investigated using both thermal simulation and experimental method. A 3-D thermal model for fast and accurate thermal simulation of the SPM is developed. The solution can describe the variation of temperature through the whole SPM structure with different high-temperature solder void rate. By means of finite element simulation method the effect of high-temperature solder void on heat dissipation of the SPM has been implemented. The simulation results have been validated by a number of experiments and shows good agreement.

Keywords

cooling; diodes; finite element analysis; hybrid integrated circuits; insulated gate bipolar transistors; power integrated circuits; solders; 3D thermal model; freewheeling diode; heat dissipation performance; high-temperature solder void; insulated gate bipolar transistor; smart power module; thermal simulation; Boundary conditions; Finite element methods; Heating; Insulated gate bipolar transistors; Materials; Metals; Performance evaluation; IGBT; SPM; finite element; high-temperature solder; thermal model;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Optoelectronics (ICEOE), 2011 International Conference on

Conference_Location

Dalian

Print_ISBN

978-1-61284-275-2

Type

conf

DOI

10.1109/ICEOE.2011.6013131

Filename

6013131