Towards a gm/ID design methodology for polymer-based organic thin film transistors

In this paper we show based on experiments that an invariant representation exists for various polymer-based solution processable organic thin film transistors (OTFTs). Despite the fact that this technology suffers from a non-negligible spread of parameters, all experimental data exhibit low dispersion when represented in a g_m/I_D versus I_D diagram. This result is important for circuit design strategy based on the g_m/I_D representation, giving more insight into analogue design methodology. In addition, the g_m/I_D invariant can also be used to extract the gate voltage mobility dependence that is inherent to organic field effect transistor.