• DocumentCode
    553338
  • Title

    Negative differential miller capacitance during switching transients of IGBTs

  • Author

    Bohmer, Jurgen ; Schumann, Jorg ; Eckel, Hans-Gunter

  • Author_Institution
    Inst. of Electr. Power Eng., Univ. of Rostock, Rostock, Germany
  • fYear
    2011
  • fDate
    Aug. 30 2011-Sept. 1 2011
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    It is well known, that the miller capacitance, which is important for the dv/dt controllability of IGBT, has a strong voltage dependency. In this paper, the dependency of the miller capacitance on the collector current and the gate drive conditions is investigated. The differential capacitance might become negative, which leads to a self turn-off process during the switching transient.
  • Keywords
    driver circuits; insulated gate bipolar transistors; switching transients; IGBT; collector current; dv/dt controllability; gate drive conditions; negative differential miller capacitance; switching transients; voltage dependency; Capacitance; Charge carrier density; Current measurement; Electric fields; Insulated gate bipolar transistors; Logic gates; Transient analysis; IGBT; MOS device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
  • Conference_Location
    Birmingham
  • Print_ISBN
    978-1-61284-167-0
  • Electronic_ISBN
    978-90-75815-15-3
  • Type

    conf

  • Filename
    6020193