Suitable operation conditions for different 100V trench-based power MOSFETs in 48V-input synchronous buck converters

Author

Roig, J. ; Lee, Daewoo ; Bauwens, Filip ; Burra, Bhavani ; Rinaldi, A. ; McDonald, John ; Desoete, Bart

Author_Institution

Power Technol. Centre, ON Semicond., Oudenaarde, Belgium

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

9

Abstract

In this work a comparative analysis between different trench-based power MOSFETs is performed to optimize the efficiency and the robustness of 48V-input synchronous buck converters. Hence, gate-trench (GT), gate-drift-trench (GDT) and split-gate (SG) trench structures are investigated by measurements and mixed-mode simulations to determine their suitability at different load currents and frequencies. Moreover, in order to reduce the ringing effects, a co-integrated resistor is proposed to optimize the inherent RC snubber branch in a SG based solution.

Keywords

mixed analogue-digital integrated circuits; power MOSFET; power convertors; snubbers; RC snubber branch; co-integrated resistor; gate-drift-trench; load currents; load frequencies; mixed-mode simulations; split-gate trench structures; synchronous buck converters; trench-based power MOSFET; voltage 100 V; voltage 48 V; Analytical models; Current measurement; Frequency measurement; Lead; Logic gates; MOSFETs; Transient analysis; Device simulation; Discrete power device; MOS device; Switched-mode power supply; Switching losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020234