DocumentCode
553499
Title
The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition
Author
Basler, Thomas ; Lutz, Josef ; Jakob, Roland ; Bruckner, Thomas
Author_Institution
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fYear
2011
fDate
Aug. 30 2011-Sept. 1 2011
Firstpage
1
Lastpage
8
Abstract
This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chips under short-circuit condition. Especially under short-circuit type two even small asymmetries in the output characteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connection drastically.
Keywords
insulated gate bipolar transistors; integrated circuit interconnections; short-circuit currents; IGBT chips; parallel connection; short-circuit condition; Current measurement; Electrical resistance measurement; Insulated gate bipolar transistors; Logic gates; Resistors; Semiconductor device measurement; Voltage measurement; IGBT; Parallel Operation; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location
Birmingham
Print_ISBN
978-1-61284-167-0
Electronic_ISBN
978-90-75815-15-3
Type
conf
Filename
6020357
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