A multi-physics model of the VJFET with a lateral channel

Author

Herve, M. ; Youness, Hassan ; Dominique, T. ; Remi, R. ; Fabien, D. ; Damien, R. ; Christian, Maxwell ; Dominique, B. ; Cyril, B. ; Regis, M.

Author_Institution

Lab. Ampere, Univ. de Lyon, Villeurbanne, France

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.

Keywords

power field effect transistors; semiconductor device models; MAST language; SABER; Shockley pn-junction model; VJFET; associated junction capacitance; lateral channel; multiphysics model; vertical-junction-field-effect-transistors; Capacitance; JFETs; Junctions; Logic gates; Mathematical model; Semiconductor device modeling; Silicon carbide; Device characterisation; Device modeling; JFET; Power semiconductor device; Silicon Carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020398