DocumentCode
553712
Title
On understanding and driving SiC power JFETs
Author
Basu, Sreetama ; Undeland, Tore M.
Author_Institution
Bose Res. PVT. Ltd., Bangalore, India
fYear
2011
fDate
Aug. 30 2011-Sept. 1 2011
Firstpage
1
Lastpage
9
Abstract
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.
Keywords
junction gate field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; high temperature operation; high voltage rating capabilities; low switching loss characteristics; power JFET; Capacitors; JFETs; Junctions; Logic gates; Resistance; Silicon carbide; Switches; Bipolar Junction Transistor (BJT); JFET; MOSFET; Silicon Carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location
Birmingham
Print_ISBN
978-1-61284-167-0
Electronic_ISBN
978-90-75815-15-3
Type
conf
Filename
6020571
Link To Document