Novel high efficiency multilevel DC-DC boost converter topologies and modulation strategies

Author

Butti, G. ; Biela, Juergen

Author_Institution

R&D Dept., Newave SA, Quartino, Switzerland

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

In this paper new topologies and interleaving modulation concepts for multilevel DC-DC boost converter enabling a significantly less loss and a reduced chip size of the power semiconductors are proposed. Moreover, a new soft switching concept is presented. The achievable efficiency, chip area and boost inductance reduction are compared with existing solutions for V_In = 800V, V_Out = 3kV and P_Out = 150 kW. A 30% loss reduction and a chip area decrease by 50% is achieved.

Keywords

DC-DC power convertors; inductance; power semiconductor devices; zero current switching; zero voltage switching; boost inductance reduction; chip area; high efficiency multilevel DC-DC boost converter topology; interleaving modulation; loss reduction; modulation strategy; power 150 kW; power semiconductor; soft switching concept; voltage 3 kV; voltage 800 V; Capacitors; Inductors; Modulation; Switches; Switching loss; Topology; Zero voltage switching; High Efficiency; Interleaving; Modulation Strategies; Multilevel Boost Converter; Soft-Switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020604