ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants

Author

Dong Xu ; Biao Wang ; Mingshuang Li ; Xiao Ye

Author_Institution

Sch. of Mater. Sci. & Eng., Jiangsu Univ., Zhenjiang, China

Volume

2

fYear

2011

fDate

12-14 Aug. 2011

Firstpage

713

Lastpage

716

Abstract

The microstructure and electrical properties of ZnO-Bi₂O₃-based varistor ceramics prepared by direct high-energy ball milling of the dopants were studied. The varistor ceramics samples were characterized by XRD and SEM analysis, as well as by dc electrical measurements, such as the nonlinearity coefficients, leakage current and threshold voltage. The best electrical characteristics were found in sample P2, which exhibited the threshold voltage was 347 V/mm, nonlinear coefficient was 39.2 and leakage current was 0.18 μA.

Keywords

II-VI semiconductors; X-ray diffraction; ball milling; bismuth compounds; ceramics; crystal microstructure; leakage currents; scanning electron microscopy; varistors; wide band gap semiconductors; zinc compounds; SEM; XRD; ZnO-Bi₂O₃; direct high-energy ball milling; electrical measurement; leakage current; microstructure; nonlinearity coefficient; threshold voltage; varistor ceramics; Ball milling; Ceramics; Microstructure; Milling; Powders; Varistors; Zinc oxide; ZnO; electrical properties; high-energy ball milling; microstructure; varistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on

Conference_Location

Harbin, Heilongjiang, China

Print_ISBN

978-1-61284-087-1

Type

conf

DOI

10.1109/EMEIT.2011.6023148

Filename

6023148