DocumentCode
554995
Title
Multi-site on-chip current sensor for electromigration monitoring
Author
Tianhan Wang ; Degang Chen ; Geiger, Richard
Author_Institution
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fYear
2011
fDate
7-10 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
An on-chip current measurement method that is suitable for electromigration management is introduced. Rather than inserting a shunt in the current flow path for creating a voltage drop, the voltage drop across existing interconnects is used to determine the current flow. Current is measured with a MOSFET-only sensing circuit that provides 9 bits of resolution with midrange current levels at the threshold where electromigration concerns become relevant. This current sensor can be used for sensing currents in either VDD or VSS busses and is targeted for use in the power power/thermal management units in integrated circuits. Simulation results show the DNL/INL of this sensor is within +0.15/-0.3 LSB. The current sensor is robust to local mismatch. The small area and low power dissipation makes the structure suitable for multiple-site on-chip current measurements.
Keywords
MOSFET; electric sensing devices; electric variables measurement; electromigration; integrated circuit interconnections; thermal management (packaging); MOSFET-only sensing circuit; current flow path; current sensor; electromigration monitoring; interconnects; multisite on-chip current sensor; thermal management; word length 9 bit; CMOS integrated circuits; Current measurement; Monitoring; Power supplies; Sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location
Seoul
ISSN
1548-3746
Print_ISBN
978-1-61284-856-3
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2011.6026283
Filename
6026283
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