• DocumentCode
    554995
  • Title

    Multi-site on-chip current sensor for electromigration monitoring

  • Author

    Tianhan Wang ; Degang Chen ; Geiger, Richard

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • fYear
    2011
  • fDate
    7-10 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An on-chip current measurement method that is suitable for electromigration management is introduced. Rather than inserting a shunt in the current flow path for creating a voltage drop, the voltage drop across existing interconnects is used to determine the current flow. Current is measured with a MOSFET-only sensing circuit that provides 9 bits of resolution with midrange current levels at the threshold where electromigration concerns become relevant. This current sensor can be used for sensing currents in either VDD or VSS busses and is targeted for use in the power power/thermal management units in integrated circuits. Simulation results show the DNL/INL of this sensor is within +0.15/-0.3 LSB. The current sensor is robust to local mismatch. The small area and low power dissipation makes the structure suitable for multiple-site on-chip current measurements.
  • Keywords
    MOSFET; electric sensing devices; electric variables measurement; electromigration; integrated circuit interconnections; thermal management (packaging); MOSFET-only sensing circuit; current flow path; current sensor; electromigration monitoring; interconnects; multisite on-chip current sensor; thermal management; word length 9 bit; CMOS integrated circuits; Current measurement; Monitoring; Power supplies; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
  • Conference_Location
    Seoul
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-61284-856-3
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2011.6026283
  • Filename
    6026283