• DocumentCode
    55771
  • Title

    Contour-Mode Ring-Shaped AlN Microresonator on Si and Feasibility of Its Application in Series-Resonant Converter

  • Author

    Imtiaz, Abusaleh M. ; Khan, Faisal H. ; Walling, Jeffrey S.

  • Author_Institution
    Power Eng. & Autom. Res. Lab., Univ. of Utah, Salt Lake City, UT, USA
  • Volume
    30
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    4437
  • Lastpage
    4454
  • Abstract
    Microelectromechanical systems (MEMS) resonators on Si have the potential to replace the discrete passive components in a power converter. The main intention of this paper is to present a ring-shaped aluminum nitride (AlN) piezoelectric microresonator that can be used as an energy-transferring device to replace inductors/capacitors in low-power resonant converters for biomedical applications. Finite-element simulation results have been provided, showing the mode of vibration at resonant frequency. The zero-voltage switching (ZVS) condition for a series-resonant converter incorporating the proposed MEMS resonator has been presented analytically and verified through experiment. This ZVS condition can be found in terms of the equivalent circuit parameters of the resonator. To the knowledge of the authors, ZVS analysis based on the equivalent electrical circuit model of the thin piezoelectric film resonators has not yet been reported in the literature. A CMOS-compatible fabrication process has been proposed and implemented. In addition, the fabricated devices have been characterized and experimental results are included in this paper. The first contour-mode AlN MEMS resonator with moderately low resonant frequency and motional resistance is reported in this paper with measured resonant frequency and motional resistance of 87.28 MHz and 36.728 Ω, respectively.
  • Keywords
    CMOS analogue integrated circuits; III-V semiconductors; aluminium compounds; bioMEMS; crystal resonators; elemental semiconductors; equivalent circuits; finite element analysis; micromechanical resonators; resonant power convertors; silicon; zero voltage switching; AlN; CMOS-compatible fabrication process; MEMS resonators; Si; ZVS; aluminum nitride microresonator; biomedical applications; contour-mode ring-shaped AlN microresonator; equivalent circuit parameters; equivalent electrical circuit; finite element simulation; frequency 87.28 MHz; microelectromechanical systems; piezoelectric microresonator; resistance 36.728 ohm; series resonant converter; silicon; thin piezoelectric film resonators; zero voltage switching; Film bulk acoustic resonators; III-V semiconductor materials; Integrated circuit modeling; Micromechanical devices; Resonant frequency; Silicon; Zero voltage switching; Fabrication; piezoelectric devices; piezoelectric films; resonant power conversion; resonators;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2014.2354397
  • Filename
    6891385