DocumentCode
558601
Title
Nanoscale characterization of different stiction mechanisms in electrostatic RF-MEMS switches
Author
Zaghloul, U. ; Bhushan, B. ; Pons, P. ; Papaioannou, G. ; Coccetti, F. ; Plana, R.
Author_Institution
LAAS, Toulouse, France
fYear
2011
fDate
10-11 Oct. 2011
Firstpage
478
Lastpage
481
Abstract
In electrostatic capacitive MEMS switches, stiction can be caused by two main mechanisms: dielectric charging and meniscus formation resulting from the adsorbed water film between the switch suspended electrode and the dielectric film. In this study, for the first time the influence of each mechanism and the interaction between both mechanisms were investigated by measuring the adhesive force under different electrical stress conditions and relative humidity levels. An atomic force microscope (AFM) was used to perform force-distance curve measurements on the nanoscale. The investigation reveals an in-depth understanding of different stiction mechanisms, and provides accurate explanations for the literature reported device level measurements for MEMS switches.
Keywords
adhesives; adsorption; atomic force microscopy; dielectric thin films; electrostatic devices; humidity; microswitches; radiofrequency integrated circuits; stiction; suspensions; adhesive force; adsorbed water film; atomic force microscope; device level measurement; dielectric charging; dielectric film; different electrical stress condition; electrostatic RF-MEMS switch; electrostatic capacitive MEMS switch; force-distance curve measurement; meniscus formation; nanoscale characterization; relative humidity level; stiction mechanism; switch suspended electrode; Dielectrics; Films; Force; Force measurement; Humidity; Microswitches; RF-MEMS switch; Stiction; adhesion force; dielectric charging; field-induced meniscus; force-distance curve;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2011 European
Conference_Location
Manchester
Print_ISBN
978-1-61284-236-3
Type
conf
Filename
6102923
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