• DocumentCode
    562246
  • Title

    Using the thermal-field measurements to evaluation the parameters of the MC based on AS

  • Author

    Kychak, Vasyl ; Slobodian, Ivan

  • Author_Institution
    Vinnytsia Nat. Tech. Univ., Vinnytsia, Ukraine
  • fYear
    2012
  • fDate
    21-24 Feb. 2012
  • Firstpage
    153
  • Lastpage
    153
  • Abstract
    In this paper the thermal-field measurements for evaluating the parameters of the memory cells (MC) based on amorphous semiconductors (AS) are used for the analysis of the temperature dependence of differential electrical conductivity of memory cells.
  • Keywords
    amorphous semiconductors; electrical conductivity; random-access storage; thermal variables measurement; AS; MC; amorphous semiconductors; differential electrical conductivity; memory cells; parameter evaluation; thermal-field measurements; Biomedical optical imaging; Optical variables measurement; Photonic band gap; Memory cell; amorphous semi-conductors; electrical conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
  • Conference_Location
    Lviv-Slavske
  • Print_ISBN
    978-1-4673-0283-8
  • Type

    conf

  • Filename
    6192457
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=562246