• DocumentCode
    563423
  • Title

    Applications of the electron beam exposure system (EBES)

  • Author

    Pease, R.F.W. ; Ballantyne, J.P. ; Henderson, R.C. ; Voshchenkov, A.M. ; Yau, L.D.

  • Author_Institution
    Bell Telephone Labs., Murray Hill, NJ, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    We review the following applications of electron lithography: (1) making high quality chrome masks for photolithography (2) making, by direct exposure, MOS integrated circuits with finer dimensions than normally obtained with photolithography, to achieve higher packing density and improved electrical performance.
  • Keywords
    MOS integrated circuits; electron beam lithography; masks; photolithography; EBES; MOS integrated circuits; electron beam exposure system; electron lithography; high quality chrome masks; packing density; photolithography; Abstracts; Arrays; Chromium; Computers; Lithography; Polymers; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219624
  • Filename
    6219624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563423