Effect of temperature on device admittance of GaAs and Si IMPATT diodes

Author

Takayama, Yoichiro

Author_Institution

Central Res. Labs., Nippon Electr. Co. Ltd., Kawasaki, Japan

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

130

Lastpage

133

Abstract

Small-signal admittance characteristics of X-band Si p₊⁺nn⁺, GaAs Mnn⁺ (conventional), and GaAs Mn₁n₂n⁺ (hi-lo Read) IMPATT diodes were measured at various junction temperatures for different dc current levels. It was shown that GaAs Mnn⁺ diode is superior to Si p⁺nn⁺ diode in temperature characteristics and that GaAs Mnn⁺ diode has smaller temperature coefficients in the device admittance as compared to GaAs Read diode. Small-signal theoretical calculation was also carried out for GaAs conventional and Read diodes having the same parameters as used in the experiment. Reasonable agreement was found in the temperature dependence of the device admittance between theoretical and experimental results.

Keywords

IMPATT diodes; elemental semiconductors; gallium arsenide; silicon; GaAs; IMPATT diodes; Read diodes; Si; dc current levels; device admittance; junction temperatures; small-signal admittance characteristics; small-signal theoretical calculation; temperature characteristics; Abstracts; Admittance; Artificial neural networks; Current measurement; Electric breakdown; Gallium arsenide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219631

Filename

6219631