DocumentCode
563492
Title
CCD´s for transversal filter applications
Author
Ibrahim, A. ; Sellars, L. ; Foxall, T. ; Steenaart, W.
Author_Institution
Bell-Northern Res., Ottawa, ON, Canada
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
240
Lastpage
243
Abstract
Two approaches to design CCD transversal filters using two-level polysilicon gate technology will be described. The design and performance will be compared.
Keywords
charge-coupled devices; elemental semiconductors; silicon; transversal filters; CCD transversal filter design; Si; charge-coupled devices; two-level polysilicon gate technology; Abstracts; Attenuation measurement; Clocks; Delay; Electric potential; Sensors; Time frequency analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219755
Filename
6219755
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