• DocumentCode
    563500
  • Title

    High-speed transistor with double base diffusion

  • Author

    Magdo, Steven ; Magdo, Ingrid

  • Author_Institution
    Syst. Products Div., IBM, Hopewell Junction, NY, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    The general trend in bipolar integrated circuits is to increase circuit speed. Most present high-speed transistor switching circuits are voltage driven; thus device base resistance plays the most important role in limiting circuit speed.
  • Keywords
    bipolar integrated circuits; bipolar transistor circuits; diffusion; high-speed techniques; switching circuits; bipolar integrated circuits; circuit speed; device base resistance; double base diffusion; high-speed transistor switching circuits; Capacitance; RNA; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219764
  • Filename
    6219764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563500