• DocumentCode
    563527
  • Title

    Quasi-saturation region model of an NPN−N transistor

  • Author

    Perner, Frederick A.

  • Author_Institution
    Syst. Products Div., Int. Bus. Machines Corp., Kingston, NY, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    418
  • Lastpage
    421
  • Abstract
    A time dependent circuit model of an NPN-N transistor is described for the simulation of the quasi-saturation region. A Current Induced Base factor is defined from an injection level model of the N- collector and used to modify the static and dynamic properties of a basic Ebers-Moll model. Curve tracer and time dependent, turn-on characteristics are used to demonstrate the effect of the CIB factor.
  • Keywords
    power bipolar transistors; NPN-N power transistor; basic Ebers-Moll model; current induced base factor; curve tracer; dynamic property; injection level model; quasisaturation region model; static property; time dependent circuit model; turn-on characteristics; Abstracts; Current measurement; Integrated circuit modeling; Neodymium; Optical wavelength conversion; Semiconductor process modeling; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219793
  • Filename
    6219793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563527