Uniform-Base InP/GaInAsSb DHBTs Exhibiting $f_{\\rm MAX}/f_{\\rm T}>635/420~{\\rm GHz}$

Author

Fluckiger, Ralf ; Lovblom, Rickard ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, C.R.

Author_Institution

Millimeter-Wave Electron. Group, ETH Zurich, Zurich, Switzerland

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

166

Lastpage

168

Abstract

Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with f_MAX=636 GHz and a simultaneous f_T=424 GHz were realized with a 20-nm-thick compositionally uniform quaternary GaInAsSb base and a 125-nm InP collector. The GaInAsSb alloy exhibits superior electron and hole transport properties compared with GaAsSb, resulting in improved device performance. The present transistors offer the highest f_MAX to date for GaInAsSb DHBTs and match the highest f_MAX of any Sb-based DHBT.

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; GaInAsSb alloy; InP collector; InP-GaInAsSb; compositionally uniform quaternary GaInAsSb; double heterojunction bipolar transistors; frequency 424 GHz; frequency 636 GHz; hole transport properties; size 125 nm; size 20 nm; superior electron properties; uniform-base DHBT; Cutoff frequency; Double heterojunction bipolar transistors; Indium; Indium phosphide; Radio frequency; Resistance; DHBTs; GaAsSb; GaInAsSb; mm-wave transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2295424

Filename

6709773