5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Author

He, Shihai ; Uchida, Yorikatsu ; Yang, Xin ; Liu, Qing ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka, Japan

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

Keywords

CMOS integrated circuits; MMIC power amplifiers; amplitude modulation; field effect MMIC; phase modulation; AM-AM distortion; AM-PM distortion; diode connected NMOS bias circuit; frequency 5.25 GHz; integrated diode; intermodulation distortion; linear CMOS power amplifier; size 0.13 mum; voltage 3.3 V; CMOS integrated circuits; Capacitance; Linearity; Logic gates; MOS devices; Power amplifiers; Transistors; CMOS power amplifier; Integrated Diode; adaptive bias; intermodulation distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230444

Filename

6230444