• DocumentCode
    566231
  • Title

    Impact of containment and deposition method on sub-micron chip-to-wafer self-assembly yield

  • Author

    Mermoz, S. ; Sanchez, L. ; Cioccio, L. Di ; Berthier, J. ; Deloffre, E. ; Fretigny, C.

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • fDate
    Jan. 31 2012-Feb. 2 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    3D technologies need a high speed high alignment accuracy chip-to-wafer hybridation technique. This paper will focus on chip-to-wafer self assembly processes coupled with direct bonding hybridation. Submicronic alignment accuracy and a 90 per cent self-assembly process yield are obtained. The self-assembly process yield is analyzed in term of alignment accuracy and direct bonding quality. The impact of the chip´s surface state (hydrophilic, hydrophobic, and mixed) on fluid containment efficiency and self-assembly process yield will be discussed. Topological containment (canthotaxis effect) is also evaluated with regards to structures height. Finally, the alignment yield as a function of deposition parameters will be described.
  • Keywords
    hydrophilicity; hydrophobicity; integrated circuit bonding; self-assembly; three-dimensional integrated circuits; topology; wafer-scale integration; 3D technologies; canthotaxis effect; chip surface state; chip-to-wafer hybridation technique; containment method; deposition method; deposition parameters; direct bonding hybridation; direct bonding quality; fluid containment efficiency; high speed high alignment; submicron chip-to-wafer self-assembly yield; submicronic alignment accuracy; topological containment; Accuracy; Bonding; Liquids; Self-assembly; Silicon; Surface treatment; 3D integration; Chip-to-wafer; alignment accuracy; chip-to-chip; deposition method; direct bonding; hybridation; self-assembly;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2011 IEEE International
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-2189-1
  • Type

    conf

  • DOI
    10.1109/3DIC.2012.6262953
  • Filename
    6262953