Composition ratio in In-Ga-Zn-Oxide FET and photoirradiation stability

Author

Hayakawa, Masahiko ; Inoue, Kouki ; Tsubuku, Masashi ; Ohta, Masashi ; Akimoto, Kengo ; Takahashi, Masahiro ; Honda, Tatsuya ; Kato, Kiyoshi ; Yamazaki, Shunpei

Author_Institution

Semicond. Energy Lab. Co., Ltd., Atsugi, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

155

Lastpage

158

Abstract

An examination is made of the effect of the In-Ga-Zn-Oxide (IGZO) composition ratio on electric characteristics and reliability of IGZO FETs and confirmed that a higher content of In and a lower content of Ga in the IGZO enable better initial electric characteristics. However, an FET with a higher content of In in the IGZO, which is subjected to photoirradiation of a channel portion, shows an Id-Vg curve having a longer tail extending in the negative direction. Furthermore, an FET with a higher content of In in the IGZO, to which negative gate bias temperature stress is applied under photoirradiation, has a greater change in characteristics. Placing importance on stability, we propose employing an In:Ga:Zn ratio of 1:1:1 for display devices which may possibly be subjected to photoirradiation.

Keywords

II-VI semiconductors; amorphous semiconductors; display devices; field effect transistors; gallium compounds; indium compounds; radiation effects; reliability theory; wide band gap semiconductors; zinc compounds; Ga content; Id-Vg curve; In-Ga-Zn-Oxide FET; In-Ga-Zn-Oxide composition ratio effect; In:Ga:Zn ratio; channel portion; display devices; electric characteristics; electric reliability; negative gate bias temperature stress; photoirradiation stability; Degradation; FETs; Films; Iron; Photonic band gap; Semiconductor device measurement; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294868