• DocumentCode
    568025
  • Title

    Double crystalline silicon channel thin film transistor by continuous-wave green laser for large-sized OLED display

  • Author

    Hayashi, Hiroshi ; Kanegae, Arinobu ; Nishida, Kenichirou ; Kawashima, Takahiro ; Saitoh, Tohru ; Komori, Kazunori

  • Author_Institution
    Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan
  • fYear
    2012
  • fDate
    4-6 July 2012
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    We developed double crystalline silicon channel thin film transistor by continuous-wave green laser. The electrical characteristics shows high mobility, high reliability, and kink-free output characteristics. The excellent characteristics and sufficient channel etching margin can provide a solution for large-sized organic light emitting diode display, including 8th generation technology.
  • Keywords
    LED displays; elemental semiconductors; organic light emitting diodes; semiconductor thin films; silicon; thin film transistors; Si; channel etching margin; continuous-wave green laser; double crystalline silicon channel thin film transistor; electrical characteristics; kink-free output characteristics; large-sized organic light emitting diode display; Amorphous silicon; Etching; Films; Organic light emitting diodes; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-0399-6
  • Type

    conf

  • Filename
    6294915