• DocumentCode
    571883
  • Title

    Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test

  • Author

    Liang Lou ; Hongkang Yan ; Cairan He ; Woo-Tae Park ; Dim-Lee Kwong ; Chengkuo Lee

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6×105 cycles, there is no observed drift and degradation in sensor characteristics.
  • Keywords
    compressive strength; diaphragms; dynamic testing; elemental semiconductors; multilayers; nanowires; piezoresistive devices; pressure sensors; silicon; SiNW; compressive strain; piezoresistive silicon nanowires; probe-based dynamic cycling test; sensor characteristics; silicon nanowires-based piezoresistive pressure sensor; suspended multilayered diaphragm; Fatigue; Piezoresistance; Silicon; Strain; Stress; Testing; Fatigue; large compressive strain; piezoresistive; pressure sensor; silicon nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306318
  • Filename
    6306318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=571883