Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories

Author

Bagatin, Marta ; Gerardin, Simone ; Ferrarese, Federica ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique ; Costantino, Alessandra ; Muschitiello, Michele ; Visconti, Angelo ; Wang, Pierre-Xiao

Author_Institution

Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

2889

Lastpage

2895

Abstract

The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories from two different lots is studied. More than 1 Terabit of floating gate cells were irradiated with gamma rays and the number of errors was statistically analyzed. The behavior of the two lots is remarkably different in terms of floating gate errors. The statistical parameters such as mean, standard deviation, and shapes of the error distributions were studied. The sample-to-sample statistical distribution of TID errors is not Gaussian and it is attributed to variability in neutral cells, due to phenomena such as random discrete dopant fluctuations. Finally, the impact of scaling on variability is discussed.

Keywords

NAND circuits; error statistics; flash memories; gamma-ray effects; logic testing; statistical analysis; statistical distributions; NAND flash memories; TID errors; bit errors; discrete dopant fluctuations; error distributions; floating gate cells; floating gate errors; gamma rays; ionizing dose response; neutral cells; sample-to-sample statistical distribution; sample-to-sample variability; size 25 nm; standard deviation; statistical parameters; Flash memories; Radiation effects; Statistical distributions; Threshold voltage; Flash memories; floating gate (FG) devices; total dose effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2367813

Filename

6966799