4H-SiC N-Channel JFET for Operation in High-Temperature Environments

Author

Wei-Chen Lien ; Damrongplasit, Nattapol ; Paredes, John H. ; Senesky, Debbie G. ; Liu, T.-J King ; Pisano, Albert P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

Volume

2

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

164

Lastpage

167

Abstract

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 × 10^-3 Ω cm² at 600°C. The on/off drain saturation current ratio and intrinsic gain at 600°C are 1.53 × 10³ and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.

Keywords

contact resistance; junction gate field effect transistors; nickel; ohmic contacts; silicon compounds; titanium compounds; wide band gap semiconductors; 4H-SiC n-channel junction field-effect transistors; SiC; Ti-Ni-TiW; contact resistance; extremely-high-temperature electronics applications; lateral depletion-mode 4H-SiC n-channel JFET; metal stacks; ohmic contacts; on-off drain saturation current ratio; temperature 600 C; well-behaved electrical characteristics; JFETs; Silicon carbide; Temperature measurement; Threshold voltage; Transconductance; High-temperature electronics; junction field effect transistor (JFET); silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2355132

Filename

6892931