• DocumentCode
    573606
  • Title

    Fault-based reliable design-on-upper-bound of electronic systems for terrestrial radiation including muons, electrons, protons and low energy neutrons

  • Author

    Ibe, Eishi ; Toba, Tadanobu ; Shimbo, Ken-ichi ; Taniguchi, Hitoshi

  • Author_Institution
    Yokohama Res. Lab., Hitachi, Ltd., Yokohama, Japan
  • fYear
    2012
  • fDate
    27-29 June 2012
  • Firstpage
    49
  • Lastpage
    54
  • Abstract
    In-depth study on environmental radiation spectra of neutrons, protons, muons, electrons, gamma rays are carried out. Soft-error rates in 130nm SRAMs are estimated based on the survey results with the following conclusions: (1) Charge deposition by muons is relatively high when the muons penetrate p-wells in SRAMs, suggesting current devices have been already affected if the critical charge is below 1fC. (2) Electrons and gamma rays may have certain impacts when the critical charge reduces as low as 0.05fC, suggesting CMOS devices will be safe for at least near future against soft error by electrons and gamma rays. (3) Soft error rates due to both muons and electrons drastically increase as critical charge reduced below certain threshold values.
  • Keywords
    CMOS memory circuits; SRAM chips; electric charge; electrons; gamma-rays; integrated circuit design; integrated circuit reliability; muons; neutrons; protons; radiation hardening (electronics); CMOS device; SRAM; critical charge reduction; electron ray; electronic system; environmental radiation spectra; fault-based reliable design-on-upper-bound; gamma ray; low energy neutron; muon charge deposition; muon p-well penetration; proton; soft-error rate; terrestrial radiation; Circuit faults; Mesons; Neutrons; Protons; Radioactive materials; Simulation; Upper bound; DOUB; beta ray; electron; environmental radiation; failure; fault; gamma ray; muon; neutron; proton; soft-error;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    On-Line Testing Symposium (IOLTS), 2012 IEEE 18th International
  • Conference_Location
    Sitges
  • Print_ISBN
    978-1-4673-2082-5
  • Type

    conf

  • DOI
    10.1109/IOLTS.2012.6313840
  • Filename
    6313840