A K-Band Down-Conversion mixer design with integrated baluns in 65nm CMOS

Author

Wei, Peng ; Diao, Shengxi ; Huang, Dong ; Fu, Zhongqian ; Lin, Fujiang

Author_Institution

Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China

fYear

2012

fDate

27-30 May 2012

Firstpage

282

Lastpage

285

Abstract

This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.

Keywords

CMOS integrated circuits; baluns; inductors; microwave mixers; resonators; CMOS process; K-band down-conversion mixer design; conversion gain improvement; current bleeding technique; gain 4.1 dB; integrated baluns; linearity improvement; loss 9 dB; noise performance improvement; passive baluns; resonating inductor; size 65 nm; CMOS integrated circuits; Impedance matching; Inductors; Mixers; Noise; Radio frequency; Switches; CMOS mixer; baluns; current bleeding; parasitic capacitors; resonating inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves (GSMM), 2012 5th Global Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4673-1302-5

Type

conf

DOI

10.1109/GSMM.2012.6314055

Filename

6314055