GaAs device Ohmic contact degradation assessment and analysis

Author

Hong, Xiao ; Huang, Yun

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., 5th Electron. Res. Inst. of the Minist. of Ind. & Inf. Technol., Guangzhou, China

fYear

2012

fDate

27-30 May 2012

Firstpage

320

Lastpage

322

Abstract

GaAs PHEMT are used abroad in high temperature and high power RF/Microwave field; it is the most promising microwave devices. In long-term use, the PHEMT device may cause parameter drift and output power decrease. In this paper, based on the analysis of device structure and degradation mechanism, we design structure doing high-temperature accelerated lift testing, and analyze using SIMS, FIB, EM and other equipment, finally evaluating Ohmic contact of GaAs devices.

Keywords

gallium arsenide; high electron mobility transistors; microwave devices; ohmic contacts; semiconductor device testing; FIB; GaAs; PHEMT device; SIMS; degradation mechanism; device structure; high power RF/microwave field; high temperature RF/microwave field; high-temperature accelerated lift testing; microwave devices; ohmic contact degradation assessment; parameter drift; Degradation; Gallium arsenide; Metals; Ohmic contacts; PHEMTs; Reliability; Stress; GaAs PHEMT device; Ohmic contact; lift testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves (GSMM), 2012 5th Global Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4673-1302-5

Type

conf

DOI

10.1109/GSMM.2012.6314064

Filename

6314064