DocumentCode
576684
Title
From the future to the mainstream, has GaAs reliability finally come of age?
Author
Roesch, William J.
Author_Institution
TriQuint Semicond., Inc., Hillsboro, OR, USA
fYear
2012
fDate
Sept. 30 2012-Oct. 3 2012
Firstpage
1
Lastpage
9
Abstract
Compound semiconductor circuits are flourishing in high volume production which has been expected and predicted for several years. As these GaAs circuits become more widely considered for use in applications of various electronic systems, instruments, and devices, questions regarding reliability arise.
Keywords
III-V semiconductors; gallium arsenide; semiconductor device reliability; GaAs; Gallium arsenide; Integrated circuit reliability; Metallization; Silicon; GaAs; HBT; RF circuits; building-in; continuous improvement; design influence; device physics; failure mechanisms; pHEMT; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location
Portland, OR
ISSN
1088-9299
Print_ISBN
978-1-4673-3020-6
Type
conf
DOI
10.1109/BCTM.2012.6352645
Filename
6352645
Link To Document