• DocumentCode
    576748
  • Title

    Characterization of Radiation Hardened Bipolar Linear Devices for High Total Dose Missions

  • Author

    McClure, Steven S. ; Harris, Richard D. ; Rax, Bernard G. ; Thorbourn, Dennis O.

  • Author_Institution
    Jet Propulsion Lab., Pasadena, CA, USA
  • fYear
    2012
  • fDate
    16-20 July 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Radiation hardened linear devices were characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased conditions are compared and the impact to hardness assurance methodology is discussed.
  • Keywords
    radiation hardening (electronics); displacement damage environments; hardness assurance methodology; high radiation level; high total dose missions; radiation hardened bipolar linear devices; Degradation; Laboratories; Performance evaluation; Protons; Radiation effects; Radiation hardening; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2012 IEEE
  • Conference_Location
    Tucson, AZ
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4673-2730-5
  • Type

    conf

  • DOI
    10.1109/REDW.2012.6353733
  • Filename
    6353733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=576748