• DocumentCode
    577427
  • Title

    Model of plasma chemical etching of Si in CCl2F2/O2 plasma

  • Author

    Bogomolov, Boris K.

  • Author_Institution
    Novosibirsk State Technical University, Novosibirsk, Russia
  • fYear
    2012
  • fDate
    18-21 Sept. 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.
  • Keywords
    elemental semiconductors; silicon; sputter etching; Si; active delivery chemically active particle conditions; etching teflon polymer; quartz reactor; silicon plasma chemical etching model; Anodes; Chemicals; Etching; Inductors; Plasmas; Silicon; nanotechnology; plasma etching; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Strategic Technology (IFOST), 2012 7th International Forum on
  • Conference_Location
    Tomsk
  • Print_ISBN
    978-1-4673-1772-6
  • Type

    conf

  • DOI
    10.1109/IFOST.2012.6357579
  • Filename
    6357579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577427