• DocumentCode
    577537
  • Title

    Application of high-frequency short-pulsed plasma-immersion ion implantation or deposition method for dielectric materials processing using gas, metal and gas-metal plasma

  • Author

    Ryabchikov, A.I. ; Stepanov, I.B. ; Sivin, D.O. ; Bumagina, A.I.

  • Author_Institution
    National research Tomsk Polytechnic University, Tomsk Russia
  • fYear
    2012
  • fDate
    18-21 Sept. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A new approach in the development of advanced coating deposition and ion implantation method including an application of filtered dc metal plasma and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10%-99% are considered. The ion energy spectrum for different negative bias potential pulse duration (120-1100) ns was measured. The map of different methods of ion beam and plasma material treatment using high-frequency short pulse metal plasma immersion ion implantation or deposition depending on bias pulse duty factor and amplitude for Cu plasma is presented. The ion assisted coating deposition depending on samples conductivity and thickness, plasma concentration, pulse repetition rate and amplitude and duty factor has been examined.
  • Keywords
    coatings; copper; electrical conductivity; high-frequency discharges; high-frequency effects; plasma diagnostics; plasma immersion ion implantation; plasma transport processes; Cu; dielectric materials; filtered dc metal plasma; gas-metal plasma; high-frequency short-pulsed negative bias voltage; high-frequency short-pulsed plasma-immersion ion implantation; ion assisted coating deposition; ion energy spectrum; negative bias potential pulse duration; plasma concentration; plasma material treatment; pulse duty factor; pulse repetition rate; time 120 ns to 1100 ns; Coatings; Electric potential; Electron tubes; Ion implantation; Metals; Plasmas; Surface treatment; high-frequency short pulse plasma immersion ion implantation; ion-assisted coating deposition; vacuum arc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Strategic Technology (IFOST), 2012 7th International Forum on
  • Conference_Location
    Tomsk
  • Print_ISBN
    978-1-4673-1772-6
  • Type

    conf

  • DOI
    10.1109/IFOST.2012.6357802
  • Filename
    6357802