DocumentCode
586516
Title
Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Author
Stoffels, Steve ; Oprins, Herman ; Marcon, Denis ; Geens, K. ; Xuanwu Kang ; Van Hove, Marleen ; Decoutere, Stefaan
Author_Institution
Imec Leuven, Leuven, Belgium
fYear
2012
fDate
25-27 Sept. 2012
Firstpage
1
Lastpage
6
Abstract
In this paper we will present an electrical equivalent electro-thermal model for simulating GaN-on-Si high electron mobility transistors (HEMTs) in circuit simulators. The extraction procedure for the thermal subcircuit will be shown, which is based on finite element modeling. The model will be verified by electrical measurements and micro-Raman measurements.
Keywords
circuit simulation; finite element analysis; gallium compounds; power HEMT; circuit simulators; coupled electro-thermal model; electrical equivalent electro-thermal model; electrical measurements; extraction procedure; finite element modeling; high electron mobility transistors; microRaman measurements; power switching HEMT; thermal subcircuit; Gallium nitride; Heating; Integrated circuit modeling; Logic gates; Temperature measurement; Thermal resistance; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Investigations of ICs and Systems (THERMINIC), 2012 18th International Workshop on
Conference_Location
Budapest
Print_ISBN
978-1-4673-1882-2
Type
conf
Filename
6400598
Link To Document