DocumentCode
586897
Title
Review on VCO based ADC in modern deep submicron CMOS technology
Author
Hon Cheong Hor ; Siek, Liter
Author_Institution
IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
21-23 Nov. 2012
Firstpage
86
Lastpage
88
Abstract
The continuous scaling in CMOS technology has driven researchers to look for new ADC architecture that can work well in lower supply voltage and smaller device dimension. VCO-based ADCs have emerged as an attractive solution due to its highly digital intensive circuit architecture, inherent noise shaping characteristic, as well as anti-aliasing property. However, the nonlinear behavior of VCO´s voltage-to-frequency characteristic has severe limitation on the performance of VCO-based ADC. This paper presents recent development in VCO-based ADC with different VCO nonlinearity suppression techniques. The advantage and disadvantage of each of these techniques will be reviewed.
Keywords
CMOS digital integrated circuits; analogue-digital conversion; voltage-controlled oscillators; VCO nonlinearity suppression technique; VCO voltage-to-frequency characteristic; VCO-based ADC architecture; antialiasing property; digital intensive circuit architecture; inherent noise shaping characteristic; modern deep submicron CMOS technology; nonlinear behavior; CMOS integrated circuits; CMOS technology; Calibration; Delay; Pulse width modulation; Sigma delta modulation; Voltage-controlled oscillators; Digital like ADC; VCO based ADC; all-digital ADC; time-mode ADC;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4673-2303-1
Type
conf
DOI
10.1109/RFIT.2012.6401622
Filename
6401622
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