DocumentCode
587071
Title
Research of temperature rise on IGBT module and DC busbar for a single-phase PWM rectifier
Author
Yifeng Zhu ; Qiongxuan Ge ; Lu Zhao
Author_Institution
Key Lab. of Power Electron. & Electr. Drive, Inst. of Electr. Eng., Beijing, China
fYear
2012
fDate
21-24 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
In the application of power converters constructed by IGBTs, the temperature rise of IGBTs is often considered to ensure safe operation of the system. The thermal distribution of a single-phase Pulse Width Modulation (PWM) rectifier is studied here. Based on accurate power dissipation of IGBTs and DC busbar, a thermal circuit model and a Finite Element Method (FEM) model are given to solve the temperature rise on the IGBTs and DC busbar. The computational results and simulation results are in agreement with the measured value tested on the 25kW single-phase PWM rectifier, which demonstrates the effectiveness of these approaches.
Keywords
PWM rectifiers; busbars; finite element analysis; insulated gate bipolar transistors; power bipolar transistors; DC busbar; FEM model; IGBT module; finite element method model; power 25 kW; single-phase PWM rectifier; single-phase pulse width modulation rectifier; temperature rise; thermal circuit model; Computational modeling; Finite element methods; Heating; Insulated gate bipolar transistors; Pulse width modulation; Rectifiers; Temperature distribution; Busbar; IGBT; Rectifier; Temperature rise;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems (ICEMS), 2012 15th International Conference on
Conference_Location
Sapporo
Print_ISBN
978-1-4673-2327-7
Type
conf
Filename
6401842
Link To Document