• DocumentCode
    587071
  • Title

    Research of temperature rise on IGBT module and DC busbar for a single-phase PWM rectifier

  • Author

    Yifeng Zhu ; Qiongxuan Ge ; Lu Zhao

  • Author_Institution
    Key Lab. of Power Electron. & Electr. Drive, Inst. of Electr. Eng., Beijing, China
  • fYear
    2012
  • fDate
    21-24 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the application of power converters constructed by IGBTs, the temperature rise of IGBTs is often considered to ensure safe operation of the system. The thermal distribution of a single-phase Pulse Width Modulation (PWM) rectifier is studied here. Based on accurate power dissipation of IGBTs and DC busbar, a thermal circuit model and a Finite Element Method (FEM) model are given to solve the temperature rise on the IGBTs and DC busbar. The computational results and simulation results are in agreement with the measured value tested on the 25kW single-phase PWM rectifier, which demonstrates the effectiveness of these approaches.
  • Keywords
    PWM rectifiers; busbars; finite element analysis; insulated gate bipolar transistors; power bipolar transistors; DC busbar; FEM model; IGBT module; finite element method model; power 25 kW; single-phase PWM rectifier; single-phase pulse width modulation rectifier; temperature rise; thermal circuit model; Computational modeling; Finite element methods; Heating; Insulated gate bipolar transistors; Pulse width modulation; Rectifiers; Temperature distribution; Busbar; IGBT; Rectifier; Temperature rise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Machines and Systems (ICEMS), 2012 15th International Conference on
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4673-2327-7
  • Type

    conf

  • Filename
    6401842