Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices

Author

Koh, Dawn ; Yum, J.H. ; Akyol, T. ; Ferrer, D.A. ; Lei, M. ; Hudnall, T.W. ; Downer, M.C. ; Bielawski, C.W. ; Hill, Richard ; Bersuker, Gennadi ; Banerjee, Sanjay K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

163

Lastpage

166

Abstract

Metal-oxide-semiconductor (MOS) capacitors and field-effect-transistors (FET) with atomic layer deposited (ALD) BeO and Al₂O₃ dielectric layers on InGaAs substrate were fabricated for electrical characterization and device performance comparison. Physical characterization of BeO grown film on Si and InGaAs substrates were done using TEM, AFM, and XPS. BeO devices show decent C-V results, lower dielectric leakage current and interface defect density. High thermal stability, large energy band-gap and strong diffusion barrier properties of BeO along with ALD self-cleaning effects on the interface makes it an excellent candidate for a dielectric or interface passivation layer for InGaAs MOS devices.

Keywords

III-V semiconductors; MOS capacitors; MOSFET; X-ray photoelectron spectra; alumina; atomic force microscopy; atomic layer deposition; beryllium compounds; diffusion barriers; energy gap; gallium arsenide; high-k dielectric thin films; indium compounds; leakage currents; passivation; thermal stability; transmission electron microscopy; AFM; Al₂O₃; BeO; BeO devices; BeO diffusion barrier properties; BeO grown film; InGaAs; InGaAs MOS devices; InGaAs substrate; Si; Si substrate; TEM; XPS; atomic layer deposited BeO dielectric layer; atomic layer deposited alumina dielectric layer; atomic layer deposited thin film beryllium oxide; atomic layer deposition self-cleaning effects; device performance; dielectric leakage current; electrical characterization; energy band-gap; interface defect density; interface passivation layer; metal-oxide-semiconductor capacitors; metal-oxide-semiconductor field-effect-transistors; physical characterization; thermal stability; Annealing; Dielectrics; Gallium arsenide; Indium gallium arsenide; MOSFETs; Performance evaluation; Silicon; ALD; Beryllium Oxide; III–V MOSFETs; MOS Capacitance; high-κ;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403347

Filename

6403347